@article{33390,
  keywords = {Thin films, Ferroelectric materials, Ferroelectricity, Non-volatile memory, Ferroelectric films, Transition metals, Ferroelectric thin films, Field effect transistors, Non-volatile storage, Memory performance, Optical memory effect, Thin film ferroelectrics, Transition metal dichalcogenides},
  author = {C Ko and Y Lee and Y H Chen and J Suh and D Fu and A Suslu and S Lee and J.D Clarkson and H.S Choe and S Tongay and Ramamoorthy Ramesh and J Wu},
  title = {Ferroelectrically gated atomically thin transition-metal dichalcogenides as nonvolatile memory},
  abstract = {Ferroelectrically driven nonvolatile memory is demonstrated by interfacing 2D semiconductors and ferroelectric thin films, exhibiting superior memory performance comparable to existing thin-film ferroelectric field-effect transistors. An optical memory effect is also observed with large modulation of photoluminescence tuned by the ferroelectric gating, potentially finding applications in optoelectronics and valleytronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.},
  year = {2016},
  journal = {Advanced Materials},
  volume = {28},
  number = {15},
  pages = {2923-2930},
  publisher = {Wiley-VCH Verlag},
  issn = {09359648},
  doi = {10.1002/adma.201504779},
  note = {cited By 51},
  language = {eng},
}