Ferroelectric field-effect transistor with a SrRuxTi1-xO3 channel
| Publication Type | Journal Article
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| Authors | |
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| DOI |
10.1063/1.1588753
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| Abstract |
The fabrication and remnant polarization characteristics of a ferroelectric field effect transistor (FET) with a solid-solution channel layer of SrRuxTi1-xO3 were studied. The remnant polarization at 0 V produced a relative change in the channel resistance, alongwith the coercivity of 3 V. The charge balancing act provided by the channel's off-state carrier concentration was also discussed.
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| Notes |
cited By 39
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| Journal |
Applied Physics Letters
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| Volume |
82
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| Year of Publication |
2003
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| Number |
26
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| Pagination |
4770-4772
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| ISSN Number |
00036951
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| Keywords |
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| Research Areas | |
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