Ferroelectric field-effect transistor with a SrRuxTi1-xO3 channel

Publication Type	Journal Article

Authors	A.G Schrott J.A Misewich V Nagarajan Ramamoorthy Ramesh
DOI	10.1063/1.1588753
Abstract	The fabrication and remnant polarization characteristics of a ferroelectric field effect transistor (FET) with a solid-solution channel layer of SrRuxTi1-xO3 were studied. The remnant polarization at 0 V produced a relative change in the channel resistance, alongwith the coercivity of 3 V. The charge balancing act provided by the channel's off-state carrier concentration was also discussed.
Notes	cited By 39
Journal	Applied Physics Letters
Volume	82
Year of Publication	2003
Number	26
Pagination	4770-4772
ISSN Number	00036951
Keywords	Pulsed laser deposition Polarization Carrier concentration Ferroelectric devices Coercive force Secondary ion mass spectrometry Non-volatile storage Electric resistance Magnetic hysteresis Remanence Solid solutions Auger electron spectroscopy Semiconducting films X-ray photoelectron spectroscopy Remnant polarization Gates (transistor)
Organizations	No Organization
Research Areas	Ramesh Lab
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