Gates (transistor)

Schrott, A.G, J.A Misewich, V Nagarajan, and Ramamoorthy Ramesh. "Ferroelectric field-effect transistor with a SrRuxTi1-xO3 channel." Applied Physics Letters 82 (2003) 4770–4772.

Bernhard, John, Ambrosio Rouse, Edward Sosa, Bruce Gnade, David Golden, Babu Chalamala, Sanjeev Aggarwal, and Ramamoorthy Ramesh. "Field emission energy distribution and current-voltage characteristics using single tip gated diodes." Materials Research Society Symposium - Proceedings. Vol. 558. Materials Research Society, Warrendale, PA, United States, 2000. 85–90.