%0 Journal Article
%K Pulsed laser deposition
%K Polarization
%K Carrier concentration
%K Ferroelectric devices
%K Coercive force
%K Secondary ion mass spectrometry
%K Non-volatile storage
%K Electric resistance
%K Magnetic hysteresis
%K Remanence
%K Solid solutions
%K Auger electron spectroscopy
%K Semiconducting films
%K X-ray photoelectron spectroscopy
%K Remnant polarization
%K Gates (transistor)
%A A.G Schrott
%A J.A Misewich
%A V Nagarajan
%A Ramamoorthy Ramesh
%B Applied Physics Letters
%D 2003
%G eng
%P 4770-4772
%R 10.1063/1.1588753
%T Ferroelectric field-effect transistor with a SrRuxTi1-xO3 channel
%V 82
%X The fabrication and remnant polarization characteristics of a ferroelectric field effect transistor (FET) with a solid-solution channel layer of SrRuxTi1-xO3 were studied. The remnant polarization at 0 V produced a relative change in the channel resistance, alongwith the coercivity of 3 V. The charge balancing act provided by the channel's off-state carrier concentration was also discussed.