@article{33693,
  keywords = {pulsed laser deposition, Polarization, Carrier concentration, Ferroelectric devices, Coercive force, Secondary ion mass spectrometry, Nonvolatile storage, Electric resistance, Magnetic hysteresis, Remanence, Solid solutions, Auger electron spectroscopy, Semiconducting films, X ray photoelectron spectroscopy, Remnant polarization, Gates (transistor)},
  author = {A.G Schrott and J.A Misewich and V Nagarajan and Ramamoorthy Ramesh},
  title = {Ferroelectric field-effect transistor with a SrRuxTi1-xO3 channel},
  abstract = {The fabrication and remnant polarization characteristics of a ferroelectric field effect transistor (FET) with a solid-solution channel layer of SrRuxTi1-xO3 were studied. The remnant polarization at 0 V produced a relative change in the channel resistance, alongwith the coercivity of 3 V. The charge balancing act provided by the channel's off-state carrier concentration was also discussed.},
  year = {2003},
  journal = {Applied Physics Letters},
  volume = {82},
  number = {26},
  pages = {4770-4772},
  issn = {00036951},
  doi = {10.1063/1.1588753},
  note = {cited By 39},
  language = {eng},
}