TY - JOUR
KW - Pulsed laser deposition
KW - Polarization
KW - Carrier concentration
KW - Ferroelectric devices
KW - Coercive force
KW - Secondary ion mass spectrometry
KW - Non-volatile storage
KW - Electric resistance
KW - Magnetic hysteresis
KW - Remanence
KW - Solid solutions
KW - Auger electron spectroscopy
KW - Semiconducting films
KW - X-ray photoelectron spectroscopy
KW - Remnant polarization
KW - Gates (transistor)
AU - A.G Schrott
AU - J.A Misewich
AU - V Nagarajan
AU - Ramamoorthy Ramesh
AB - The fabrication and remnant polarization characteristics of a ferroelectric field effect transistor (FET) with a solid-solution channel layer of SrRuxTi1-xO3 were studied. The remnant polarization at 0 V produced a relative change in the channel resistance, alongwith the coercivity of 3 V. The charge balancing act provided by the channel's off-state carrier concentration was also discussed.
BT - Applied Physics Letters
DO - 10.1063/1.1588753
LA - eng
M1 - 26
N1 - cited By 39
N2 - The fabrication and remnant polarization characteristics of a ferroelectric field effect transistor (FET) with a solid-solution channel layer of SrRuxTi1-xO3 were studied. The remnant polarization at 0 V produced a relative change in the channel resistance, alongwith the coercivity of 3 V. The charge balancing act provided by the channel's off-state carrier concentration was also discussed.
PY - 2003
SP - 4770
EP - 4772
T2 - Applied Physics Letters
TI - Ferroelectric field-effect transistor with a SrRuxTi1-xO3 channel
VL - 82
SN - 00036951
ER -