The physics of ferroelectric memories

Publication Type	Journal Article

Authors	O Auciello J.F Scott Ramamoorthy Ramesh
DOI	10.1063/1.882324
Notes	cited By 1063
Journal	Physics Today
Volume	51
Year of Publication	1998
Number	7
Pagination	22-27
Publisher	American Institute of Physics Inc.
ISSN Number	00319228
Keywords	Thin films Perovskite Hysteresis Ferroelectric materials Single crystals Random access storage Non-volatile storage Capacitors Semiconducting bismuth compounds Ferroelectric memories Semiconductor device manufacture Boolean algebra Electronics industry Ferroelectric crystals Solid state memory Semiconductor storage
Organizations	No Organization
Research Areas	Ramesh Lab
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