@article{33846,
  keywords = {Thin films, Perovskite, Hysteresis, Ferroelectric materials, Single crystals, Random access storage, Non-volatile storage, Capacitors, Semiconducting bismuth compounds, Ferroelectric memories, Semiconductor device manufacture, Boolean algebra, Electronics industry, Ferroelectric crystals, Solid state memory, Semiconductor storage},
  author = {O Auciello and J.F Scott and Ramamoorthy Ramesh},
  title = {The physics of ferroelectric memories},
  year = {1998},
  journal = {Physics Today},
  volume = {51},
  number = {7},
  pages = {22-27},
  publisher = {American Institute of Physics Inc.},
  issn = {00319228},
  doi = {10.1063/1.882324},
  note = {cited By 1063},
  language = {eng},
}