@article{33846,
  keywords = {thin films, Perovskite, hysteresis, Ferroelectric materials, Single crystals, Random access storage, Nonvolatile storage, Capacitors, Semiconducting bismuth compounds, Ferroelectric memories, Semiconductor device manufacture, Boolean algebra, Electronics industry, Ferroelectric crystals, Solid state memory, Semiconductor storage},
  author = {O Auciello and J.F Scott and Ramamoorthy Ramesh},
  title = {The physics of ferroelectric memories},
  year = {1998},
  journal = {Physics Today},
  volume = {51},
  number = {7},
  pages = {22-27},
  publisher = {American Institute of Physics Inc.},
  issn = {00319228},
  doi = {10.1063/1.882324},
  note = {cited By 1063},
  language = {eng},
}