Ferroelectric devices

Schmitz, T, K Prume, S Tiedke, A Roelofs, T Schneller, U Kall, M Grossmann, R Waser, C Ganpule, A Stanishefsky, and Ramamoorthy Ramesh. "Electrical measurements on capacitor sizes in the submicron regime for the characterization of real memory cell capacitors." Integrated Ferroelectrics. Vol. 37. 2001. 163–172.

Ramesh, Ramamoorthy, T Sands, V.G Keramidas, D.K Fork, Tuttle Bruce A, Desu Seshu B, and Larsen Poul K. "Ferroelectric La-Sr-Co-O/Pb-Zr-Ti-O/La-Sr-Co-O heterostructures on silicon: reliability testing." Materials Research Society Symposium - Proceedings. Ed. Myers R. Vol. 310. Publ by Materials Research Society, Pittsburgh, PA, United States, 1993. 195–200.

Friessnegg, T, B Nielsen, V.J Ghosh, S Aggarwal, D.J Keeble, E.H Poindexter, and Ramamoorthy Ramesh. "Oxygen deficiency and vacancy formation in LSCO/PLZT/LSCO capacitors." Materials Research Society Symposium - Proceedings. Vol. 596. Materials Research Society, Warrendale, PA, United States, 2000. 393–397.

Roytburd, A.L, S.P Alpay, V Nagarajan, C.S Ganpule, S Aggarwal, E.D Williams, and Ramamoorthy Ramesh. "Measurement of internal stresses via the polarization in epitaxial ferroelectric films." Physical Review Letters 85 (2000) 190–193.

Subramanyam, G, F.A Miranda, F Van Keuls, R.R Romanofsky, C.L Canedy, S Aggarwal, T Venkatesan, and Ramamoorthy Ramesh. "Performance of a K-Band Voltage-Controlled Lange Coupler Using a Ferroelectric Tunable Microstrip Configuration." IEEE Microwave and Guided Wave Letters 10 (2000) 136–138.

Aggarwal, S, C Ganpule, I.G Jenkins, B Nagaraj, A Stanishevsky, J Melngailis, E Williams, and Ramamoorthy Ramesh. "High density ferroelectric memories: Materials, processing and scaling." Integrated Ferroelectrics 28 (2000) 213–225.

Aggarwal, S, B Nagaraj, I.G Jenkins, H Li, R.P Sharma, L Salamanca-Riba, Ramamoorthy Ramesh, A.M Dhote, A.R Krauss, and O Auciello. "Correlation between oxidation resistance and crystallinity of Ti-Al as a barrier layer for high-density memories." Acta Materialia 48 (2000) 3387–3394.

.T, J , Jr, L.L Boyer, G Velasquez, Ramamoorthy Ramesh, S Aggarwal, and V Keramidas. "Effect of hydrogen anneals on niobium-doped lead zirconate titanate capacitors with lanthanum strontium cobalt oxide/platinum electrodes." Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 38 (1999) 5361–5363.

Aggarwal, S, I.G Jenkins, B Nagaraj, C.J Kerr, C Canedy, Ramamoorthy Ramesh, G Velasquez, L Boyer, and J .T Jr. "Switching properties of Pb(Nb, Zr,Ti)O3 capacitors using SrRuO3 electrodes." Applied Physics Letters 75 (1999) 1787–1789.

Lu, Z, C Serrao, A.I Khan, J.D Clarkson, J.C Wong, Ramamoorthy Ramesh, and S Salahuddin. "Electrically induced, non-volatile, metal insulator transition in a ferroelectric-controlled MoS2 transistor." Applied Physics Letters 112 (2018).