TY - JOUR
KW - Integrated circuits
KW - Ferroelectric materials
KW - Ferroelectricity
KW - Orders of magnitude
KW - Negative capacitance
KW - Ferroelectric devices
KW - Ferroelectric capacitors
KW - Capacitance
KW - Capacitors
KW - Drain current
KW - MOSFET devices
KW - Reconfigurable hardware
KW - SPICE
KW - Epitaxial ferroelectric
KW - NC-FinFET
KW - Self-consistent simulations
KW - Sub-60 mV/decade
KW - Transfer characteristics
AU - A.I Khan
AU - K Chatterjee
AU - J.P Duarte
AU - Z Lu
AU - A Sachid
AU - S Khandelwal
AU - Ramamoorthy Ramesh
AU - C Hu
AU - S Salahuddin
AB - We report subthreshold swings as low as 8.5 mV/decade over as high as eight orders of magnitude of drain current in short-channel negative capacitance FinFETs (NC-FinFETs) with gate length Lg=100 nm. NC-FinFETs are constructed by connecting a high-quality epitaxial bismuth ferrite (BiFeO3) ferroelectric capacitor to the gate terminal of both n-type and p-type FinFETs. We show that a self-consistent simulation scheme based on Berkeley SPICE Insulated-Gate-FET Model:Common Multi Gate model and Landau-Devonshire formalism could quantitatively match the experimental NC-FinFET transfer characteristics. This also allows a general procedure to extract the effective S-shaped ferroelectric charge-voltage characteristics that provides important insights into the device operation. © 2015 IEEE.
BT - IEEE Electron Device Letters
DO - 10.1109/LED.2015.2501319
LA - eng
M1 - 1
N1 - cited By 106
N2 - We report subthreshold swings as low as 8.5 mV/decade over as high as eight orders of magnitude of drain current in short-channel negative capacitance FinFETs (NC-FinFETs) with gate length Lg=100 nm. NC-FinFETs are constructed by connecting a high-quality epitaxial bismuth ferrite (BiFeO3) ferroelectric capacitor to the gate terminal of both n-type and p-type FinFETs. We show that a self-consistent simulation scheme based on Berkeley SPICE Insulated-Gate-FET Model:Common Multi Gate model and Landau-Devonshire formalism could quantitatively match the experimental NC-FinFET transfer characteristics. This also allows a general procedure to extract the effective S-shaped ferroelectric charge-voltage characteristics that provides important insights into the device operation. © 2015 IEEE.
PB - Institute of Electrical and Electronics Engineers Inc.
PY - 2016
SP - 111
EP - 114
T2 - IEEE Electron Device Letters
TI - Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor
VL - 37
SN - 07413106
ER -