@article{33399,
  keywords = {Integrated circuits, Ferroelectric materials, Ferroelectricity, Orders of magnitude, Negative capacitance, Ferroelectric devices, Ferroelectric capacitors, Capacitance, Capacitors, Drain current, MOSFET devices, Reconfigurable hardware, SPICE, Epitaxial ferroelectric, NC-FinFET, Self-consistent simulations, Sub-60 mV/decade, Transfer characteristics},
  author = {A.I Khan and K Chatterjee and J.P Duarte and Z Lu and A Sachid and S Khandelwal and Ramamoorthy Ramesh and C Hu and S Salahuddin},
  title = {Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor},
  abstract = {We report subthreshold swings as low as 8.5 mV/decade over as high as eight orders of magnitude of drain current in short-channel negative capacitance FinFETs (NC-FinFETs) with gate length Lg=100 nm. NC-FinFETs are constructed by connecting a high-quality epitaxial bismuth ferrite (BiFeO3) ferroelectric capacitor to the gate terminal of both n-type and p-type FinFETs. We show that a self-consistent simulation scheme based on Berkeley SPICE Insulated-Gate-FET Model:Common Multi Gate model and Landau-Devonshire formalism could quantitatively match the experimental NC-FinFET transfer characteristics. This also allows a general procedure to extract the effective S-shaped ferroelectric charge-voltage characteristics that provides important insights into the device operation. © 2015 IEEE.},
  year = {2016},
  journal = {IEEE Electron Device Letters},
  volume = {37},
  number = {1},
  pages = {111-114},
  publisher = {Institute of Electrical and Electronics Engineers Inc.},
  issn = {07413106},
  doi = {10.1109/LED.2015.2501319},
  note = {cited By 106},
  language = {eng},
}