%0 Journal Article
%K Integrated circuits
%K Ferroelectric materials
%K Ferroelectricity
%K Orders of magnitude
%K Negative capacitance
%K Ferroelectric devices
%K Ferroelectric capacitors
%K Capacitance
%K Capacitors
%K Drain current
%K MOSFET devices
%K Reconfigurable hardware
%K SPICE
%K Epitaxial ferroelectric
%K NC-FinFET
%K Self-consistent simulations
%K Sub-60 mV/decade
%K Transfer characteristics
%A A.I Khan
%A K Chatterjee
%A J.P Duarte
%A Z Lu
%A A Sachid
%A S Khandelwal
%A Ramamoorthy Ramesh
%A C Hu
%A S Salahuddin
%B IEEE Electron Device Letters
%D 2016
%G eng
%I Institute of Electrical and Electronics Engineers Inc.
%P 111-114
%R 10.1109/LED.2015.2501319
%T Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor
%V 37
%X We report subthreshold swings as low as 8.5 mV/decade over as high as eight orders of magnitude of drain current in short-channel negative capacitance FinFETs (NC-FinFETs) with gate length Lg=100 nm. NC-FinFETs are constructed by connecting a high-quality epitaxial bismuth ferrite (BiFeO3) ferroelectric capacitor to the gate terminal of both n-type and p-type FinFETs. We show that a self-consistent simulation scheme based on Berkeley SPICE Insulated-Gate-FET Model:Common Multi Gate model and Landau-Devonshire formalism could quantitatively match the experimental NC-FinFET transfer characteristics. This also allows a general procedure to extract the effective S-shaped ferroelectric charge-voltage characteristics that provides important insights into the device operation. © 2015 IEEE.