@article{33814,
  keywords = {thin films, electric potential, Ferroelectric devices, Semiconductor device manufacture, Phase shifters, Barium strontium titanate, Microstrip lines, Phase shift, Ku band},
  author = {F.W Van Keuls and R.R Romanofsky and N.D Varaljay and F.A Miranda and C.L Canedy and S Aggarwal and T Venkatesan and Ramamoorthy Ramesh},
  title = {A Ku-band gold/BaxSr1-xTiO3/LaAlO3 conductor/thin-film ferroelectric microstrip line phase shifter for room-temperature communications applications},
  abstract = {We report on the performance of a Ku-band gold/ Ba0.5Sr0.5TiO3/LaAlO3 (Au/BSTO/LAO) coupled microstip line phase shifter fabricated with a 370 nm thick BSTO film. Two hundred degrees of contiguous relative insertion phase shift (ΔφS21), with insertion losses of 4.6 dB, were measured at room temperature, 14.3 GHz, and maximum dc voltage of 400 V. These results represent significant progress toward viable compact, low-loss, thin-film ferroelectric-based phase shifters at room temperature. © 1999 John Wiley & Sons, Inc.},
  year = {1999},
  journal = {Microwave and Optical Technology Letters},
  volume = {20},
  number = {1},
  pages = {53-56},
  publisher = {John Wiley and Sons Inc.},
  issn = {08952477},
  doi = {10.1002/(SICI)1098-2760(19990105)20:1<53::AID-MOP15>3.0.CO;2-L},
  note = {cited By 33},
  language = {eng},
}