%0 Journal Article
%K Thin films
%K Electric potential
%K Ferroelectric devices
%K Semiconductor device manufacture
%K Phase shifters
%K Barium strontium titanate
%K Microstrip lines
%K Phase shift
%K Ku band
%A F.W Van Keuls
%A R.R Romanofsky
%A N.D Varaljay
%A F.A Miranda
%A C.L Canedy
%A S Aggarwal
%A T Venkatesan
%A Ramamoorthy Ramesh
%B Microwave and Optical Technology Letters
%D 1999
%G eng
%I John Wiley and Sons Inc.
%P 53-56
%R 10.1002/(SICI)1098-2760(19990105)20:1<53::AID-MOP15>3.0.CO;2-L
%T A Ku-band gold/BaxSr1-xTiO3/LaAlO3 conductor/thin-film ferroelectric microstrip line phase shifter for room-temperature communications applications
%V 20
%X We report on the performance of a Ku-band gold/ Ba0.5Sr0.5TiO3/LaAlO3 (Au/BSTO/LAO) coupled microstip line phase shifter fabricated with a 370 nm thick BSTO film. Two hundred degrees of contiguous relative insertion phase shift (ΔφS21), with insertion losses of 4.6 dB, were measured at room temperature, 14.3 GHz, and maximum dc voltage of 400 V. These results represent significant progress toward viable compact, low-loss, thin-film ferroelectric-based phase shifters at room temperature. © 1999 John Wiley &amp; Sons, Inc.