TY - JOUR
KW - Transistors
KW - Zirconium compounds
KW - Metals
KW - Titanium compounds
KW - Ferroelectricity
KW - Metal insulator boundaries
KW - Semiconductor insulator boundaries
KW - Metal insulator transition
KW - Ferroelectric devices
KW - Lead compounds
KW - Molybdenum compounds
KW - Biased voltage
KW - Epitaxially grown
KW - Ferroelectric capacitors
KW - Field effects
KW - Insulating phase
KW - Metal-insulator phase transition
KW - Remnant polarizations
KW - Single-crystalline
KW - Sulfur compounds
AU - Z Lu
AU - C Serrao
AU - A.I Khan
AU - J.D Clarkson
AU - J.C Wong
AU - Ramamoorthy Ramesh
AU - S Salahuddin
AB - We demonstrate an electrically induced, non-volatile, metal-insulator phase transition in a MoS2 transistor. A ferroelectric capacitor made of single crystalline, epitaxially grown PbZr0.2Ti0.8O3 was connected to the gate of a field effect thin film MoS2 transistor. When a voltage is applied to this ferroelectric capacitor, a clear transition from an insulator to a metal and vice versa is observed in the transistor. Importantly, when the biased voltage is turned off, the remnant polarization in the ferroelectric can keep the MoS2 in its original phase, thereby providing a non-volatile state. Thus, a metallic or insulating phase can be written, erased, or retained simply by biasing the externally connected ferroelectric capacitor. © 2018 Author(s).
BT - Applied Physics Letters
DO - 10.1063/1.5005004
LA - eng
M1 - 4
N1 - cited By 7
N2 - We demonstrate an electrically induced, non-volatile, metal-insulator phase transition in a MoS2 transistor. A ferroelectric capacitor made of single crystalline, epitaxially grown PbZr0.2Ti0.8O3 was connected to the gate of a field effect thin film MoS2 transistor. When a voltage is applied to this ferroelectric capacitor, a clear transition from an insulator to a metal and vice versa is observed in the transistor. Importantly, when the biased voltage is turned off, the remnant polarization in the ferroelectric can keep the MoS2 in its original phase, thereby providing a non-volatile state. Thus, a metallic or insulating phase can be written, erased, or retained simply by biasing the externally connected ferroelectric capacitor. © 2018 Author(s).
PB - American Institute of Physics Inc.
PY - 2018
T2 - Applied Physics Letters
TI - Electrically induced, non-volatile, metal insulator transition in a ferroelectric-controlled MoS2 transistor
VL - 112
SN - 00036951
ER -