Metallorganic chemical vapor deposition

Yang, S.Y, Q Zhan, P.L Yang, M.P Cruz, Y.H Chu, Ramamoorthy Ramesh, Y.R Wu, J Singh, W Tian, and D.G Schlom. "+Capacitance-voltage characteristics of BiFe O3 SrTi O3 GaN heteroepitaxial structures." Applied Physics Letters 91 (2007).

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Yang, S.Y, F Zavaliche, L Mohaddes-Ardabili, V Vaithyanathan, D.G Schlom, Y.J Lee, Y.H Chu, M.P Cruz, Q Zhan, T Zhao, and Ramamoorthy Ramesh. "Metalorganic chemical vapor deposition of lead-free ferroelectric BiFeO 3 films for memory applications." Applied Physics Letters 87 (2005).

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Nagarajan, V, S Aggarwal, A Gruverman, Ramamoorthy Ramesh, and R Waser. "Nanoscale polarization relaxation in a polycrystalline ferroelectric thin film: Role of local environments." Applied Physics Letters 86 (2005) 1–3.

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Yang, S, B Liu, J Ouyang, V Nagarajan, V.N Kulkarni, Ramamoorthy Ramesh, J Kidder, R Droopad, and K Eisenbeiser. "Epitaxial Pb(Zr,Ti)O 3 capacitors on Si by liquid delivery metalorganic chemical vapor deposition." Journal of Electroceramics 14 (2005) 37–44.

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Ouyang, J, S.Y Yang, L Chen, Ramamoorthy Ramesh, and A.L Roytburd. "Orientation dependence of the converse piezoelectric constants for epitaxial single domain ferroelectric films." Applied Physics Letters 85 (2004) 278–280.

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Ramesh, Ramamoorthy, S Aggarwal, and O Auciello. "Science and technology of ferroelectric films and heterostructures for non-volatile ferroelectric memories." Materials Science and Engineering: R: Reports 32 (2001) 191–236.

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