%0 Journal Article
%K Hysteresis
%K Epitaxial growth
%K Gallium nitride
%K Magnetic films
%K Metallorganic chemical vapor deposition
%K Growth orientation
%K Interface control
%K Rotational twins
%K Sweeping voltage
%A S.Y Yang
%A Q Zhan
%A P.L Yang
%A M.P Cruz
%A Y.H Chu
%A Ramamoorthy Ramesh
%A Y.R Wu
%A J Singh
%A W Tian
%A D.G Schlom
%B Applied Physics Letters
%D 2007
%G eng
%R 10.1063/1.2757089
%T +Capacitance-voltage characteristics of BiFe O3 SrTi O3 GaN heteroepitaxial structures
%V 91
%X The authors report the integration of multiferroic BiFe O3 films with the semiconductor GaN using liquid-delivery metal-organic chemical-vapor deposition. Epitaxial BiFe O3 films were deposited via interface control using SrTi O3 buffer/template layers. The growth orientation relationship was found to be (111) [1 1- 0] BiFe O3 ∥ (111) [1 1- 0] SrTi O3 ∥ (0001) [11 2- 0] GaN, with in-plane 180° rotational twins. The C-V characteristics of a PtBiFe O3 SrTi O3 GaN capacitor exhibited hysteresis with a memory window of ∼3 V at a sweeping voltage of ±30 V. © 2007 American Institute of Physics.