TY - JOUR
KW - Deposition
KW - Thin films
KW - Hysteresis
KW - Atomic force microscopy
KW - Polarization
KW - Epitaxial growth
KW - Ferroelectricity
KW - Piezoelectric devices
KW - Metallorganic chemical vapor deposition
KW - Lead-free ferroelectric
KW - Perovskite phase thin films
KW - Systematic control
KW - Phase equilibria
AU - S.Y Yang
AU - F Zavaliche
AU - L Mohaddes-Ardabili
AU - V Vaithyanathan
AU - D.G Schlom
AU - Y.J Lee
AU - Y.H Chu
AU - M.P Cruz
AU - Q Zhan
AU - T Zhao
AU - Ramamoorthy Ramesh
AB - We have grown BiFeO3 thin films on SrRuO3 SrTiO3 and SrRuO3 SrTiO3 Si using liquid delivery metalorganic chemical vapor deposition. Epitaxial BiFeO3 films were successfully prepared through the systematic control of the chemical reaction and deposition process. We found that the film composition and phase equilibrium are sensitive to the Bi:Fe ratio in the precursor. Fe-rich mixtures show the existence of α- Fe2 O3, while Bi-rich mixtures show the presence of Β- Bi2 O3 as a second phase at the surface. In the optimized films, we were able to obtain an epitaxial single perovskite phase thin film. Electrical measurements using both quasistatic hysteresis and pulsed polarization measurements confirm the existence of ferroelectricity with a switched polarization of 110-120 μC cm2, ΔP (= P* - P ∧). Out-of plane piezoelectric (d33) measurements using an atomic force microscope yield a value of 50-60 pmV. © 2005 American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.2041830
LA - eng
M1 - 10
N1 - cited By 216
N2 - We have grown BiFeO3 thin films on SrRuO3 SrTiO3 and SrRuO3 SrTiO3 Si using liquid delivery metalorganic chemical vapor deposition. Epitaxial BiFeO3 films were successfully prepared through the systematic control of the chemical reaction and deposition process. We found that the film composition and phase equilibrium are sensitive to the Bi:Fe ratio in the precursor. Fe-rich mixtures show the existence of α- Fe2 O3, while Bi-rich mixtures show the presence of Β- Bi2 O3 as a second phase at the surface. In the optimized films, we were able to obtain an epitaxial single perovskite phase thin film. Electrical measurements using both quasistatic hysteresis and pulsed polarization measurements confirm the existence of ferroelectricity with a switched polarization of 110-120 μC cm2, ΔP (= P* - P ∧). Out-of plane piezoelectric (d33) measurements using an atomic force microscope yield a value of 50-60 pmV. © 2005 American Institute of Physics.
PY - 2005
T2 - Applied Physics Letters
TI - Metalorganic chemical vapor deposition of lead-free ferroelectric BiFeO 3 films for memory applications
VL - 87
SN - 00036951
ER -