TY - JOUR
KW - Thin films
KW - Pulsed laser deposition
KW - Silicon
KW - Zirconium
KW - Epitaxial growth
KW - Random access storage
KW - Lead compounds
KW - Silicon wafers
KW - Capacitors
KW - Microelectromechanical devices
KW - Metallorganic chemical vapor deposition
KW - Lead zirconate titanate (PZT)
KW - Liquid delivery MOCVD
KW - LSCO/PZT/LSCO capacitors
KW - SrTiO3 template layers
KW - Zr(dmhd)4
KW - Ferroelectric ceramics
AU - S Yang
AU - B Liu
AU - J Ouyang
AU - V Nagarajan
AU - V.N Kulkarni
AU - Ramamoorthy Ramesh
AU - J Kidder
AU - R Droopad
AU - K Eisenbeiser
AB - La 0.5Sr 0.5CoO 3/Pb(Zr x Ti 1-x )O 3/La 0.5Sr 0.5CoO 3 capacitors have been successfully fabricated by liquid delivery metalorganic chemical vapor deposition on Si wafers using SrTiO 3 thin layer (20 nm) as a template. Zr(dmhd) 4 in tetrahydrofuran was used as Zr precursor for compatible thermal behavior with Pb(thd) 2 and Ti(OiPr) 2(thd) 2 precursors. The dependence of the ferroelectric film composition on the precursor mixing ratio and growth temperature has been systematically studied by Rutherford Backscattering (RBS). Ferroelectric and piezoelectric properties at the composition close to morphotropic phase boundary region (Pb(Zr 0.5Ti 0.5)O 3) have been investigated for application in nonvolatile ferroelectric random access memories and microelectromechanical system (MEMS). These capacitors show desirable ferroelectric properties which proves that this approach is very promising for both fundamental study and potential applications. The changes of spontaneous polarization (P s ) and piezoelectric coefficient (d 33) with Ti/(Zr + Ti) ratio are also presented and compared with theoretical values. © 2005 Springer Science + Business Media Inc.
BT - Journal of Electroceramics
DO - 10.1007/s10832-005-6582-4
LA - eng
M1 - 1
N1 - cited By 10
N2 - La 0.5Sr 0.5CoO 3/Pb(Zr x Ti 1-x )O 3/La 0.5Sr 0.5CoO 3 capacitors have been successfully fabricated by liquid delivery metalorganic chemical vapor deposition on Si wafers using SrTiO 3 thin layer (20 nm) as a template. Zr(dmhd) 4 in tetrahydrofuran was used as Zr precursor for compatible thermal behavior with Pb(thd) 2 and Ti(OiPr) 2(thd) 2 precursors. The dependence of the ferroelectric film composition on the precursor mixing ratio and growth temperature has been systematically studied by Rutherford Backscattering (RBS). Ferroelectric and piezoelectric properties at the composition close to morphotropic phase boundary region (Pb(Zr 0.5Ti 0.5)O 3) have been investigated for application in nonvolatile ferroelectric random access memories and microelectromechanical system (MEMS). These capacitors show desirable ferroelectric properties which proves that this approach is very promising for both fundamental study and potential applications. The changes of spontaneous polarization (P s ) and piezoelectric coefficient (d 33) with Ti/(Zr + Ti) ratio are also presented and compared with theoretical values. © 2005 Springer Science + Business Media Inc.
PY - 2005
SP - 37
EP - 44
T2 - Journal of Electroceramics
TI - Epitaxial Pb(Zr,Ti)O 3 capacitors on Si by liquid delivery metalorganic chemical vapor deposition
VL - 14
SN - 13853449
ER -