@article{33609,
  keywords = {hysteresis, Epitaxial growth, Gallium nitride, Magnetic films, Metallorganic chemical vapor deposition, Growth orientation, Interface control, Rotational twins, Sweeping voltage},
  author = {S.Y Yang and Q Zhan and P.L Yang and M.P Cruz and Y.H Chu and Ramamoorthy Ramesh and Y.R Wu and J Singh and W Tian and D.G Schlom},
  title = {+Capacitance-voltage characteristics of BiFe O3 SrTi O3 GaN heteroepitaxial structures},
  abstract = {The authors report the integration of multiferroic BiFe O3 films with the semiconductor GaN using liquid-delivery metal-organic chemical-vapor deposition. Epitaxial BiFe O3 films were deposited via interface control using SrTi O3 buffer/template layers. The growth orientation relationship was found to be (111) [1 1- 0] BiFe O3 ∥ (111) [1 1- 0] SrTi O3 ∥ (0001) [11 2- 0] GaN, with in-plane 180° rotational twins. The C-V characteristics of a PtBiFe O3 SrTi O3 GaN capacitor exhibited hysteresis with a memory window of ∼3 V at a sweeping voltage of ±30 V. © 2007 American Institute of Physics.},
  year = {2007},
  journal = {Applied Physics Letters},
  volume = {91},
  number = {2},
  issn = {00036951},
  doi = {10.1063/1.2757089},
  note = {cited By 52},
  language = {eng},
}