TY - JOUR
KW - Hysteresis
KW - Epitaxial growth
KW - Gallium nitride
KW - Magnetic films
KW - Metallorganic chemical vapor deposition
KW - Growth orientation
KW - Interface control
KW - Rotational twins
KW - Sweeping voltage
AU - S.Y Yang
AU - Q Zhan
AU - P.L Yang
AU - M.P Cruz
AU - Y.H Chu
AU - Ramamoorthy Ramesh
AU - Y.R Wu
AU - J Singh
AU - W Tian
AU - D.G Schlom
AB - The authors report the integration of multiferroic BiFe O3 films with the semiconductor GaN using liquid-delivery metal-organic chemical-vapor deposition. Epitaxial BiFe O3 films were deposited via interface control using SrTi O3 buffer/template layers. The growth orientation relationship was found to be (111) [1 1- 0] BiFe O3 ∥ (111) [1 1- 0] SrTi O3 ∥ (0001) [11 2- 0] GaN, with in-plane 180° rotational twins. The C-V characteristics of a PtBiFe O3 SrTi O3 GaN capacitor exhibited hysteresis with a memory window of ∼3 V at a sweeping voltage of ±30 V. © 2007 American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.2757089
LA - eng
M1 - 2
N1 - cited By 52
N2 - The authors report the integration of multiferroic BiFe O3 films with the semiconductor GaN using liquid-delivery metal-organic chemical-vapor deposition. Epitaxial BiFe O3 films were deposited via interface control using SrTi O3 buffer/template layers. The growth orientation relationship was found to be (111) [1 1- 0] BiFe O3 ∥ (111) [1 1- 0] SrTi O3 ∥ (0001) [11 2- 0] GaN, with in-plane 180° rotational twins. The C-V characteristics of a PtBiFe O3 SrTi O3 GaN capacitor exhibited hysteresis with a memory window of ∼3 V at a sweeping voltage of ±30 V. © 2007 American Institute of Physics.
PY - 2007
T2 - Applied Physics Letters
TI - +Capacitance-voltage characteristics of BiFe O3 SrTi O3 GaN heteroepitaxial structures
VL - 91
SN - 00036951
ER -