+Capacitance-voltage characteristics of BiFe O3 SrTi O3 GaN heteroepitaxial structures
Publication Type | Journal Article
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Authors | |
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DOI |
10.1063/1.2757089
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Abstract |
The authors report the integration of multiferroic BiFe O3 films with the semiconductor GaN using liquid-delivery metal-organic chemical-vapor deposition. Epitaxial BiFe O3 films were deposited via interface control using SrTi O3 buffer/template layers. The growth orientation relationship was found to be (111) [1 1- 0] BiFe O3 ∥ (111) [1 1- 0] SrTi O3 ∥ (0001) [11 2- 0] GaN, with in-plane 180° rotational twins. The C-V characteristics of a PtBiFe O3 SrTi O3 GaN capacitor exhibited hysteresis with a memory window of ∼3 V at a sweeping voltage of ±30 V. © 2007 American Institute of Physics.
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Notes |
cited By 52
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Journal |
Applied Physics Letters
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Volume |
91
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Year of Publication |
2007
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Number |
2
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ISSN Number |
00036951
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Keywords | |
Research Areas | |
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