Gallium nitride

Ihlefeld, J.F, W Tian, Z.K Liu, W.A Doolittle, M Bernhagen, P Reiche, R Uecker, Ramamoorthy Ramesh, and D.G Schlom. "Adsorption-controlled growth of BiFeO3 by MBE and integration with wide band gap semiconductors." IEEE International Symposium on Applications of Ferroelectrics. Vol. 3. 2008.

Yang, S.Y, Q Zhan, P.L Yang, M.P Cruz, Y.H Chu, Ramamoorthy Ramesh, Y.R Wu, J Singh, W Tian, and D.G Schlom. "+Capacitance-voltage characteristics of BiFe O3 SrTi O3 GaN heteroepitaxial structures." Applied Physics Letters 91 (2007).

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Tian, W, V Vaithyanathan, D.G Schlom, Q Zhan, S.Y Yang, Y.H Chu, and Ramamoorthy Ramesh. "Epitaxial integration of (0001) BiFe O3 with (0001) GaN." Applied Physics Letters 90 (2007).

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