TY - JOUR
KW - Thin films
KW - Polarization
KW - Epitaxial growth
KW - Bismuth compounds
KW - Surface charge
KW - Gallium nitride
KW - (0001) BiFe O3
KW - (0001) GaN
KW - Out of plane polarization
KW - Single crystal surfaces
AU - W Tian
AU - V Vaithyanathan
AU - D.G Schlom
AU - Q Zhan
AU - S.Y Yang
AU - Y.H Chu
AU - Ramamoorthy Ramesh
AB - Epitaxial growth of (0001)-oriented BiFe O3 thin films on the (0001) surface of GaN has been realized using intervening epitaxial (111) SrTi O3 (100) Ti O2 buffer layers. The epitaxial BiFe O3 thin films have two in-plane orientations: [11 2- 0] BiFe O3 ∥ [11 2- 0] GaN plus a twin variant related by a 180° in-plane rotation. BiFe O3 shows an out-of-plane remanent polarization of ∼90 μC cm2, which is comparable to the remanent polarization of BiFe O3 prepared on (111) SrTi O3 single crystal substrates. The orientation of BiFe O3 realized on GaN provides the maximal out-of-plane polarization of BiFe O3, which is equivalent to a surface charge of 5× 1014 electrons cm2. © 2007 American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.2730580
LA - eng
M1 - 17
N1 - cited By 70
N2 - Epitaxial growth of (0001)-oriented BiFe O3 thin films on the (0001) surface of GaN has been realized using intervening epitaxial (111) SrTi O3 (100) Ti O2 buffer layers. The epitaxial BiFe O3 thin films have two in-plane orientations: [11 2- 0] BiFe O3 ∥ [11 2- 0] GaN plus a twin variant related by a 180° in-plane rotation. BiFe O3 shows an out-of-plane remanent polarization of ∼90 μC cm2, which is comparable to the remanent polarization of BiFe O3 prepared on (111) SrTi O3 single crystal substrates. The orientation of BiFe O3 realized on GaN provides the maximal out-of-plane polarization of BiFe O3, which is equivalent to a surface charge of 5× 1014 electrons cm2. © 2007 American Institute of Physics.
PY - 2007
T2 - Applied Physics Letters
TI - Epitaxial integration of (0001) BiFe O3 with (0001) GaN
VL - 90
SN - 00036951
ER -