Crystal defects

Keeble, D.J, S Madhukar, B Nielsen, A Krishnan, P Asoka-Kumar, S Aggarwal, Ramamoorthy Ramesh, and E.H Poindexter. "Vacancy related defects in La0.5Sr0.5CoO3-δ thin films." Materials Research Society Symposium - Proceedings. Vol. 477. MRS, Warrendale, PA, United States, 1997. 229–233.

Krishnan, A, D.J Keeble, Ramamoorthy Ramesh, W.L Warren, B.A Tuttle, R.L Pfeffer, B Nielsen, and K.G Lynn. "Vacancy related defects in thin film Pb(ZrTi)O3 materials." Materials Research Society Symposium - Proceedings. Vol. 361. Materials Research Society, Pittsburgh, PA, United States, 1995. 129–134.

Ghonge, S.G, E Goo, Ramamoorthy Ramesh, R Haakenaasen, and D.K Fork. "Epitaxial ferroelectric thin films." Proceedings - Annual Meeting, Microscopy Society of America. Ed. Garratt-Reed G.W. 1994. 572–573.

Ghonge, S.G, E Goo, Ramamoorthy Ramesh, R Haakenaasen, and D.K Fork. "Microstructure of epitaxial oxide thin film heterostructures on silicon by pulsed laser deposition." Applied Physics Letters 64 (1994) 3407–3409.

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Lubk, A, M.D Rossell, J Seidel, Y.H Chu, Ramamoorthy Ramesh, M.J Hÿtch, and E Snoeck. "Electromechanical coupling among edge dislocations, domain walls, and nanodomains in BiFeO3 revealed by unit-cell-wise strain and polarization maps." Nano Letters 13 (2013) 1410–1415.

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Shinde, S.R, S.B Ogale, J Higgins, R.J Choudhary, V.N Kulkarni, T Venkatesan, H Zheng, Ramamoorthy Ramesh, A.V Pogrebnyakov, S.Y Xu, Q Li, X.X Xi, J.M Redwing, and D Kanjilal. "Modification of critical current density of MgB 2 films irradiated with 200 MeV Ag ions." Applied Physics Letters 84 (2004) 2352–2354.

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Friessnegg, T, B Nielsen, V.J Ghosh, S Aggarwal, D.J Keeble, E.H Poindexter, and Ramamoorthy Ramesh. "Oxygen deficiency and vacancy formation in LSCO/PLZT/LSCO capacitors." Materials Research Society Symposium - Proceedings. Vol. 596. Materials Research Society, Warrendale, PA, United States, 2000. 393–397.

Friessnegg, T, S Aggarwal, B Nielsen, Ramamoorthy Ramesh, D.J Keeble, and E.H Poindexter. "Investigation of vacancy-related defects in (Pb,La)(Zr,Ti)O3 thin films using positron annihilation." IEEE International Symposium on Applications of Ferroelectrics. IEEE, Piscataway, NJ, United States, 1998. 147–150.