Vacancy related defects in thin film Pb(ZrTi)O3 materials
Publication Type | Conference Paper
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Abstract |
Positron annihilation techniques have been applied to characterize vacancy-related defects in ferroelectric thin film structures. Variable energy positron beam measurements were carried out on doped and undoped Pb(Zr,Ti)O3 (PZT) samples subjected to different post-deposition cool down and anneal conditions. The PZT was deposited by sol-gel with either with platinum or RuO2 electrodes, or by laser ablation with La0.5Sr0.5CoO3 electrodes. The RuO2 and La0.5Sr0.5CoO3 electrode samples showed a smaller S-parameter compared to those deposited with Pt electrodes consistent with an improved PZT layer quality. For laser ablated samples cooled in a reducing ambient an increase in S-parameter for both the PZT and La0.5Sr0.5CoO3 layers was observed indicating an increase in neutral or negatively charged open-volume defects.
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Notes |
cited By 4
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Conference Name |
Materials Research Society Symposium - Proceedings
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Volume |
361
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Year of Publication |
1995
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Pagination |
129-134
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Publisher |
Materials Research Society, Pittsburgh, PA, United States
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ISSN Number |
02729172
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Keywords | |
Research Areas | |
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