@inproceedings{33925,
  keywords = {cooling, deposition, thin films, annealing, laser ablation, electrodes, Ferroelectric materials, Lead compounds, Crystal defects, Lead zirconate titanate, Sol-gels, Positron annihilation, Titanium oxides, Vacancy related defects},
  author = {A Krishnan and D.J Keeble and Ramamoorthy Ramesh and W.L Warren and B.A Tuttle and R.L Pfeffer and B Nielsen and K.G Lynn},
  title = {Vacancy related defects in thin film Pb(ZrTi)O3 materials},
  abstract = {Positron annihilation techniques have been applied to characterize vacancy-related defects in ferroelectric thin film structures. Variable energy positron beam measurements were carried out on doped and undoped Pb(Zr,Ti)O3 (PZT) samples subjected to different post-deposition cool down and anneal conditions. The PZT was deposited by sol-gel with either with platinum or RuO2 electrodes, or by laser ablation with La0.5Sr0.5CoO3 electrodes. The RuO2 and La0.5Sr0.5CoO3 electrode samples showed a smaller S-parameter compared to those deposited with Pt electrodes consistent with an improved PZT layer quality. For laser ablated samples cooled in a reducing ambient an increase in S-parameter for both the PZT and La0.5Sr0.5CoO3 layers was observed indicating an increase in neutral or negatively charged open-volume defects.},
  year = {1995},
  journal = {Materials Research Society Symposium - Proceedings},
  volume = {361},
  pages = {129-134},
  publisher = {Materials Research Society, Pittsburgh, PA, United States},
  issn = {02729172},
  note = {cited By 4},
  language = {eng},
}