%0 Conference Paper
%K cooling
%K deposition
%K thin films
%K annealing
%K laser ablation
%K electrodes
%K Ferroelectric materials
%K Lead compounds
%K Crystal defects
%K Lead zirconate titanate
%K Sol-gels
%K Positron annihilation
%K Titanium oxides
%K Vacancy related defects
%A A Krishnan
%A D.J Keeble
%A Ramamoorthy Ramesh
%A W.L Warren
%A B.A Tuttle
%A R.L Pfeffer
%A B Nielsen
%A K.G Lynn
%B Materials Research Society Symposium - Proceedings
%D 1995
%G eng
%I Materials Research Society, Pittsburgh, PA, United States
%P 129-134
%T Vacancy related defects in thin film Pb(ZrTi)O3 materials
%V 361
%X Positron annihilation techniques have been applied to characterize vacancy-related defects in ferroelectric thin film structures. Variable energy positron beam measurements were carried out on doped and undoped Pb(Zr,Ti)O3 (PZT) samples subjected to different post-deposition cool down and anneal conditions. The PZT was deposited by sol-gel with either with platinum or RuO2 electrodes, or by laser ablation with La0.5Sr0.5CoO3 electrodes. The RuO2 and La0.5Sr0.5CoO3 electrode samples showed a smaller S-parameter compared to those deposited with Pt electrodes consistent with an improved PZT layer quality. For laser ablated samples cooled in a reducing ambient an increase in S-parameter for both the PZT and La0.5Sr0.5CoO3 layers was observed indicating an increase in neutral or negatively charged open-volume defects.