TY - JOUR
KW - Thin films
KW - Ion beams
KW - Morphology
KW - Atomic force microscopy
KW - Computer software
KW - Computer simulation
KW - Energy dissipation
KW - Electric resistance
KW - Crystal defects
KW - Current voltage characteristics
KW - Pinning
KW - Columnar defects
KW - Electronic energy loss
KW - Chemical vapor deposition
KW - Critical current density (superconductivity)
KW - Deformation
KW - Ion bombardment
KW - Magnesium compounds
KW - Particle accelerators
AU - S.R Shinde
AU - S.B Ogale
AU - J Higgins
AU - R.J Choudhary
AU - V.N Kulkarni
AU - T Venkatesan
AU - H Zheng
AU - Ramamoorthy Ramesh
AU - A.V Pogrebnyakov
AU - S.Y Xu
AU - Q Li
AU - X.X Xi
AU - J.M Redwing
AU - D Kanjilal
AB - The modification in the temperature and field dependence of critical current density of high quality MgB 2 thin films, irradiated with 200 MeV Ag ion, was studied. A standard four-probe technique with a direct current source was used for transport measurements. Significant enhancement in critical current density, in a specific magnetic field range, was observed for MgB 2 films. The formation of defect clusters in high concentration is suggested to be responsible for the observed improvement in J C.
BT - Applied Physics Letters
DO - 10.1063/1.1687982
LA - eng
M1 - 13
N1 - cited By 32
N2 - The modification in the temperature and field dependence of critical current density of high quality MgB 2 thin films, irradiated with 200 MeV Ag ion, was studied. A standard four-probe technique with a direct current source was used for transport measurements. Significant enhancement in critical current density, in a specific magnetic field range, was observed for MgB 2 films. The formation of defect clusters in high concentration is suggested to be responsible for the observed improvement in J C.
PY - 2004
SP - 2352
EP - 2354
T2 - Applied Physics Letters
TI - Modification of critical current density of MgB 2 films irradiated with 200 MeV Ag ions
VL - 84
SN - 00036951
ER -