TY - JOUR
KW - Electricity
KW - Transmission electron microscopy
KW - Transistors
KW - Microscopy
KW - Electron
KW - Semiconductor
KW - Chemistry
KW - Polarization
KW - Domain walls
KW - Nanostructures
KW - Ferroelectricity
KW - Article
KW - Phase-field simulation
KW - Scanning transmission electron microscopy
KW - Piezoelectricity
KW - Ferroelectric thin films
KW - Field effect transistors
KW - Ferric oxide
KW - Nanomaterial
KW - Particle Size
KW - Aberration-corrected scanning transmission electron microscopies
KW - Device optimization
KW - Ferroelectric field effect transistors
KW - Finite size effect
KW - Lattice structures
KW - Piezoelectric couplings
KW - Piezoelectric tensor
KW - Crystal defects
KW - Dislocations (crystals)
KW - Electromechanical coupling
KW - Edge dislocations
KW - Beryllium
KW - Beryllium oxide
KW - Ferric ion
KW - Ferric Compounds
KW - Scanning Transmission
KW - Electronic
AU - A Lubk
AU - M.D Rossell
AU - J Seidel
AU - Y.H Chu
AU - Ramamoorthy Ramesh
AU - M.J Hÿtch
AU - E Snoeck
AB - The performance of ferroelectric devices, for example, the ferroelectric field effect transistor, is reduced by the presence of crystal defects such as edge dislocations. For example, it is well-known that edge dislocations play a crucial role in the formation of ferroelectric dead-layers at interfaces and hence finite size effects in ferroelectric thin films. The detailed lattice structure including the relevant electromechanical coupling mechanisms in close vicinity of the edge dislocations is, however, not well-understood, which hampers device optimization. Here, we investigate edge dislocations in ferroelectric BiFeO3 by means of spherical aberration-corrected scanning transmission electron microscopy, a dedicated model-based structure analysis, and phase field simulations. Unit-cell-wise resolved strain and polarization profiles around edge dislocation reveal a wealth of material states including polymorph nanodomains and multiple domain walls characteristically pinned to the dislocation. We locally determine the piezoelectric tensor and identify piezoelectric coupling as the driving force for the observed phenomena, explaining, for example, the orientation of the domain wall with respect to the edge dislocation. Furthermore, an atomic model for the dislocation core is derived. © 2013 American Chemical Society.
BT - Nano Letters
DO - 10.1021/nl304229k
LA - eng
M1 - 4
N1 - cited By 48
N2 - The performance of ferroelectric devices, for example, the ferroelectric field effect transistor, is reduced by the presence of crystal defects such as edge dislocations. For example, it is well-known that edge dislocations play a crucial role in the formation of ferroelectric dead-layers at interfaces and hence finite size effects in ferroelectric thin films. The detailed lattice structure including the relevant electromechanical coupling mechanisms in close vicinity of the edge dislocations is, however, not well-understood, which hampers device optimization. Here, we investigate edge dislocations in ferroelectric BiFeO3 by means of spherical aberration-corrected scanning transmission electron microscopy, a dedicated model-based structure analysis, and phase field simulations. Unit-cell-wise resolved strain and polarization profiles around edge dislocation reveal a wealth of material states including polymorph nanodomains and multiple domain walls characteristically pinned to the dislocation. We locally determine the piezoelectric tensor and identify piezoelectric coupling as the driving force for the observed phenomena, explaining, for example, the orientation of the domain wall with respect to the edge dislocation. Furthermore, an atomic model for the dislocation core is derived. © 2013 American Chemical Society.
PY - 2013
SP - 1410
EP - 1415
T2 - Nano Letters
TI - Electromechanical coupling among edge dislocations, domain walls, and nanodomains in BiFeO3 revealed by unit-cell-wise strain and polarization maps
VL - 13
SN - 15306984
ER -