%0 Journal Article
%K Thin films
%K Ion beams
%K Morphology
%K Atomic force microscopy
%K Computer software
%K Computer simulation
%K Energy dissipation
%K Electric resistance
%K Crystal defects
%K Current voltage characteristics
%K Pinning
%K Columnar defects
%K Electronic energy loss
%K Chemical vapor deposition
%K Critical current density (superconductivity)
%K Deformation
%K Ion bombardment
%K Magnesium compounds
%K Particle accelerators
%A S.R Shinde
%A S.B Ogale
%A J Higgins
%A R.J Choudhary
%A V.N Kulkarni
%A T Venkatesan
%A H Zheng
%A Ramamoorthy Ramesh
%A A.V Pogrebnyakov
%A S.Y Xu
%A Q Li
%A X.X Xi
%A J.M Redwing
%A D Kanjilal
%B Applied Physics Letters
%D 2004
%G eng
%P 2352-2354
%R 10.1063/1.1687982
%T Modification of critical current density of MgB 2 films irradiated with 200 MeV Ag ions
%V 84
%X The modification in the temperature and field dependence of critical current density of high quality MgB 2 thin films, irradiated with 200 MeV Ag ion, was studied. A standard four-probe technique with a direct current source was used for transport measurements. Significant enhancement in critical current density, in a specific magnetic field range, was observed for MgB 2 films. The formation of defect clusters in high concentration is suggested to be responsible for the observed improvement in J C.