@article{33673,
  keywords = {thin films, ion beams, morphology, atomic force microscopy, Computer software, Computer simulation, Energy dissipation, Electric resistance, Crystal defects, Current voltage characteristics, pinning, Columnar defects, Electronic energy loss, Chemical vapor deposition, Critical current density (superconductivity), Deformation, Ion bombardment, Magnesium compounds, Particle accelerators},
  author = {S.R Shinde and S.B Ogale and J Higgins and R.J Choudhary and V.N Kulkarni and T Venkatesan and H Zheng and Ramamoorthy Ramesh and A.V Pogrebnyakov and S.Y Xu and Q Li and X.X Xi and J.M Redwing and D Kanjilal},
  title = {Modification of critical current density of MgB 2 films irradiated with 200 MeV Ag ions},
  abstract = {The modification in the temperature and field dependence of critical current density of high quality MgB 2 thin films, irradiated with 200 MeV Ag ion, was studied. A standard four-probe technique with a direct current source was used for transport measurements. Significant enhancement in critical current density, in a specific magnetic field range, was observed for MgB 2 films. The formation of defect clusters in high concentration is suggested to be responsible for the observed improvement in J C.},
  year = {2004},
  journal = {Applied Physics Letters},
  volume = {84},
  number = {13},
  pages = {2352-2354},
  issn = {00036951},
  doi = {10.1063/1.1687982},
  note = {cited By 32},
  language = {eng},
}