Modification of critical current density of MgB 2 films irradiated with 200 MeV Ag ions
Publication Type | Journal Article
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Authors | |
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DOI |
10.1063/1.1687982
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Abstract |
The modification in the temperature and field dependence of critical current density of high quality MgB 2 thin films, irradiated with 200 MeV Ag ion, was studied. A standard four-probe technique with a direct current source was used for transport measurements. Significant enhancement in critical current density, in a specific magnetic field range, was observed for MgB 2 films. The formation of defect clusters in high concentration is suggested to be responsible for the observed improvement in J C.
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Notes |
cited By 32
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Journal |
Applied Physics Letters
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Volume |
84
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Year of Publication |
2004
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Number |
13
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Pagination |
2352-2354
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ISSN Number |
00036951
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Keywords |
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Research Areas | |
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