Oxygen deficiency and vacancy formation in LSCO/PLZT/LSCO capacitors
| Publication Type | Conference Paper
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| Authors | |
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| Abstract |
Vacancy type defects in La0.5Sr0.5CoO3/Pb0.9La0.1Zr0.2 Ti0.8/La0.5Sr0.5CoO3 capacitors were investigated by positron depth profiling. Post-growth annealing of the capacitor structure in oxygen deficient atmosphere exhibits the formation of vacancy type defects in all layers. A significant increase in open volume defects was found in the top and bottom electrode. The changes in the bottom electrode were studied more closely by etching off the top layer.
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| Notes |
cited By 2
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| Conference Name |
Materials Research Society Symposium - Proceedings
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| Volume |
596
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| Year of Publication |
2000
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| Pagination |
393-397
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| Publisher |
Materials Research Society, Warrendale, PA, United States
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| ISSN Number |
02729172
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| Keywords | |
| Research Areas | |
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