%0 Conference Paper
%K Deposition
%K Pulsed laser deposition
%K Annealing
%K Hysteresis
%K Etching
%K Oxygen
%K Lanthanum compounds
%K Ferroelectric devices
%K Lead compounds
%K Capacitors
%K Crystal defects
%K Hysteresis loops
%K Pulsed laser applications
%K Partial pressure
%K Positrons
%K Oxygen deficient atmosphere
%K Positron depth profiling
%K Post growth annealing
%A T Friessnegg
%A B Nielsen
%A V.J Ghosh
%A S Aggarwal
%A D.J Keeble
%A E.H Poindexter
%A Ramamoorthy Ramesh
%B Materials Research Society Symposium - Proceedings
%D 2000
%G eng
%I Materials Research Society, Warrendale, PA, United States
%P 393-397
%T Oxygen deficiency and vacancy formation in LSCO/PLZT/LSCO capacitors
%V 596
%X Vacancy type defects in La0.5Sr0.5CoO3/Pb0.9La0.1Zr0.2 Ti0.8/La0.5Sr0.5CoO3 capacitors were investigated by positron depth profiling. Post-growth annealing of the capacitor structure in oxygen deficient atmosphere exhibits the formation of vacancy type defects in all layers. A significant increase in open volume defects was found in the top and bottom electrode. The changes in the bottom electrode were studied more closely by etching off the top layer.