TY - CPAPER
KW - Deposition
KW - Pulsed laser deposition
KW - Annealing
KW - Hysteresis
KW - Etching
KW - Oxygen
KW - Lanthanum compounds
KW - Ferroelectric devices
KW - Lead compounds
KW - Capacitors
KW - Crystal defects
KW - Hysteresis loops
KW - Pulsed laser applications
KW - Partial pressure
KW - Positrons
KW - Oxygen deficient atmosphere
KW - Positron depth profiling
KW - Post growth annealing
AU - T Friessnegg
AU - B Nielsen
AU - V.J Ghosh
AU - S Aggarwal
AU - D.J Keeble
AU - E.H Poindexter
AU - Ramamoorthy Ramesh
AB - Vacancy type defects in La0.5Sr0.5CoO3/Pb0.9La0.1Zr0.2 Ti0.8/La0.5Sr0.5CoO3 capacitors were investigated by positron depth profiling. Post-growth annealing of the capacitor structure in oxygen deficient atmosphere exhibits the formation of vacancy type defects in all layers. A significant increase in open volume defects was found in the top and bottom electrode. The changes in the bottom electrode were studied more closely by etching off the top layer.
BT - Proceedings of the Materials Research Society Symposium -
LA - eng
N1 - cited By 2
N2 - Vacancy type defects in La0.5Sr0.5CoO3/Pb0.9La0.1Zr0.2 Ti0.8/La0.5Sr0.5CoO3 capacitors were investigated by positron depth profiling. Post-growth annealing of the capacitor structure in oxygen deficient atmosphere exhibits the formation of vacancy type defects in all layers. A significant increase in open volume defects was found in the top and bottom electrode. The changes in the bottom electrode were studied more closely by etching off the top layer.
PB - Materials Research Society, Warrendale, PA, United States
PY - 2000
SP - 393
EP - 397
T2 - Proceedings of the Materials Research Society Symposium -
T3 - Materials Research Society Symposium -
TI - Oxygen deficiency and vacancy formation in LSCO/PLZT/LSCO capacitors
VL - 596
SN - 02729172
ER -