@article{33937,
  keywords = {Deposition, Microstructure, Thin films, Pulsed laser deposition, Transmission electron microscopy, Yttria stabilized zirconia, Zirconia, Lanthanum compounds, Epitaxial growth, Bismuth compounds, X-ray Diffraction, Heterojunctions, Lead compounds, Crystal defects, Semiconducting silicon, Lanthanum strontium cobalt oxide, X-ray Analysis, Bismuth titanate, Lanthanum modified lead zirconate titanate, Pole figure analysis, Thin film heterostructures},
  author = {S.G Ghonge and E Goo and Ramamoorthy Ramesh and R Haakenaasen and D.K Fork},
  title = {Microstructure of epitaxial oxide thin film heterostructures on silicon by pulsed laser deposition},
  abstract = {The microstructure of epitaxial La0.5Sr0.5CoO 3(LSCO)/ferroelectric lanthanum modified lead zirconate titanate (PLZT)/ La0.5Sr0.5CoO3(LSCO)/bismuth titanate(BT)/yttria-stabilized zirconia (YSZ) heterostructures on [001] silicon has been investigated. X-ray diffraction and pole figure analysis reveal epitaxial growth of the PLZT, LSCO, BT, and YSZ layers. High resolution transmission electron microscopy was done to study the crystal defects and interfacial structure.},
  year = {1994},
  journal = {Applied Physics Letters},
  volume = {64},
  number = {25},
  pages = {3407-3409},
  issn = {00036951},
  doi = {10.1063/1.111293},
  note = {cited By 15},
  language = {eng},
}