Nathan Newman

Publications

Viewing 7 of 7 publications

1992

Newman, Nathan, Jennifer T Ross, and Michael D Rubin. "Thermodynamic and Kinetic Processes Involved in the Growth of Epitaxial GaN Thin Films." Applied Physics Letters 62 (1992) 1242.

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1995

Chan, James S, Nathan W Cheung, Lawrence F Schloss, Erin C Jones, William S Wong, Nathan Newman, Xiaohong Liu, Eicke R Weber, A Gassman, and Michael D Rubin. "Thermal Annealing Characteristics of Si and Mg-implanted GaN Thin Films." Applied Physics Letters 68.19 (1995) 2702–2704.

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Fu, T.C, Nathan Newman, Erin C Jones, James S Chan, Xiaohong Liu, Michael D Rubin, Nathan W Cheung, and Eicke R Weber. "The Influence of Nitrogen Ion Energy on the Quality of GaN Films Grown with Molecular Beam Epitaxy." Journal of Electronic Materials 24.4 (1995) 249–255.

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1993

Rubin, Michael D, Nathan Newman, James S Chan, T.C Fu, and Jennifer T Ross. "P-Type Gallium Nitride by Reactive Ion-Beam Molecular Beam Epitaxy with Ion Implantation, Diffusion or Coevaporation of Mg." Applied Physics Letters 64.1 (1993) 64–66.

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Ross, Jennifer T, Michael D Rubin, X Yao, Nathan Newman, and Amy Moll. Ion Implantation of Mg and C into GaN Films Grown by Ion-Assisted MBE. 1993.

Chan, James S, T.C Fu, Nathan W Cheung, Jennifer T Ross, Nathan Newman, and Michael D Rubin. "Comparison of AIN Films Grown by RF at Magnetron Sputtering and Ion-Assisted Molecular Beam Epitaxy." Materials Research Society. Vol. 300. San Francisco, CA, 1993.

1994

Newman, Nathan, T.C Fu, Z Liu, Zuzanna Liliental-Weber, Michael D Rubin, James S Chan, Erin C Jones, Jennifer T Ross, Ian M Tidswell, Kin Man Yu, Nathan W Cheung, and Eicke R Weber. "Fundamental Materials-Issues Involved in the Growth of GaN by Molecular Beam Epitaxy." 1994.