Comparison of AIN Films Grown by RF at Magnetron Sputtering and Ion-Assisted Molecular Beam Epitaxy
Date Published |
04/1993
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Publication Type | Conference Paper
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Authors | |
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LBL Report Number |
LBL-35660
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Abstract |
Crystalline aluminum nitride (AlN) thin films were formed on various substrates by using RF magnetron sputtering of an A1 target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AlN/(111) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770 °C, while the crystallinity of AlN/(0001) Al2O3 samples improved from 700 to 850 °C. The optical absorption characteristics of the AlN/(0001) Al2O3 films as grown by both deposition methods revealed a decrease in sub-band gap absorption with increased substrate temperature. |
Conference Name |
Materials Research Society
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Volume |
300
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Year of Publication |
1993
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Conference Location |
San Francisco, CA
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Other Numbers |
UC-400
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Custom 1 |
<p>Windows and Daylighting Group</p>
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Organizations | |
Research Areas | |
File(s) | |
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