%0 Conference Paper
%A James S Chan
%A T.C Fu
%A Nathan W Cheung
%A Jennifer T Ross
%A Nathan Newman
%A Michael D Rubin
%B Materials Research Society
%C San Francisco, CA
%D 1993
%G eng
%T Comparison of AIN Films Grown by RF at Magnetron Sputtering and Ion-Assisted Molecular Beam Epitaxy
%V 300
%1 <p>Windows and Daylighting Group</p>
%2 LBL-35660
%8 04/1993
%X <p>Crystalline aluminum nitride (AlN) thin films were formed on various substrates by using RF magnetron sputtering of an A1 target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AlN/(111) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770 °C, while the crystallinity of AlN/(0001) Al<sub>2</sub>O<sub>3</sub> samples improved from 700 to 850 °C. The optical absorption characteristics of the AlN/(0001) Al<sub>2</sub>O<sub>3</sub> films as grown by both deposition methods revealed a decrease in sub-band gap absorption with increased substrate temperature.</p>