@inproceedings{23543,
  author = {James S Chan and T.C Fu and Nathan W Cheung and Jennifer T Ross and Nathan Newman and Michael D Rubin},
  title = {Comparison of AIN Films Grown by RF at Magnetron Sputtering and Ion-Assisted Molecular Beam Epitaxy},
  abstract = {<p>Crystalline aluminum nitride (AlN) thin films were formed on various substrates by using RF magnetron sputtering of an A1 target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AlN/(111) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770 °C, while the crystallinity of AlN/(0001) Al<sub>2</sub>O<sub>3</sub> samples improved from 700 to 850 °C. The optical absorption characteristics of the AlN/(0001) Al<sub>2</sub>O<sub>3</sub> films as grown by both deposition methods revealed a decrease in sub-band gap absorption with increased substrate temperature.</p>},
  year = {1993},
  journal = {Materials Research Society},
  volume = {300},
  month = {04/1993},
  address = {San Francisco, CA},
  language = {eng},
}