%0 Journal Article
%K Activated nitrogen
%K GaN
%K Molecular beam epitaxy
%K Nitrogen ion energy
%A T.C Fu
%A Nathan Newman
%A Erin C Jones
%A James S Chan
%A Xiaohong Liu
%A Michael D Rubin
%A Nathan W Cheung
%A Eicke R Weber
%B Journal of Electronic Materials
%D 1995
%G eng
%N 4
%P 249-255
%R 10.1007/BF02659683
%T The Influence of Nitrogen Ion Energy on the Quality of GaN Films Grown with Molecular Beam Epitaxy
%V 24
%1 <p>Windows and Daylighting Group</p>
%2 LBL-37223
%8 04/1995