%0 Journal Article
%K Ion implantation
%K Carrier density
%K Carrier mobility
%K Crystal doping
%K Diffusion
%K Evaporation
%K Gallium nitrides
%K Magnesium additions
%K Molecular beam epitaxy
%K P−type conductors
%A Michael D Rubin
%A Nathan Newman
%A James S Chan
%A T.C Fu
%A Jennifer T Ross
%B Applied Physics Letters
%D 1993
%G eng
%N 1
%P 64-66
%R 10.1063/1.110870
%T P-Type Gallium Nitride by Reactive Ion-Beam Molecular Beam Epitaxy with Ion Implantation, Diffusion or Coevaporation of Mg
%V 64
%1 <p>Windows and Daylighting Group</p>
%2 LBL-34413
%! Appl. Phys. Lett.
%X <p>Gallium nitride is one of the most promising materials for ultraviolet and blue light‐emitting diodes and lasers. The principal technical problem that limits device applications has been achieving controllable <em>p</em>‐type doping. Molecular beam epitaxy assisted by a nitrogen ion beam produced <em>p</em>‐type GaN when doped via ion implantation, diffusion, or coevaporation of Mg. Nearly intrinsic <em>p</em>‐type material was also produced without intentional doping, exhibiting hole carrier concentrations of 5×10<sup>11</sup> cm<sup>−3</sup> and hole mobilities of over 400 cm<sup>2</sup>/V/s at 250 K. This value for the hole mobility is an order of magnitude greater than previously reported.</p>