%0 Journal Article
%K Ion implantation
%K Carrier density
%K Carrier mobility
%K Crystal doping
%K Diffusion
%K Evaporation
%K Gallium nitrides
%K Magnesium additions
%K Molecular beam epitaxy
%K P−type conductors
%A Michael D Rubin
%A Nathan Newman
%A James S Chan
%A T.C Fu
%A Jennifer T Ross
%B Applied Physics Letters
%D 1993
%G eng
%N 1
%P 64-66
%R 10.1063/1.110870
%T P-Type Gallium Nitride by Reactive Ion-Beam Molecular Beam Epitaxy with Ion Implantation, Diffusion or Coevaporation of Mg
%V 64
%1 <p>Windows and Daylighting Group</p>
%2 LBL-34413
%! Appl. Phys. Lett.