@article{23887,
  keywords = {Ion implantation, Carrier density, Carrier mobility, Crystal doping, Diffusion, Evaporation, Gallium nitrides, Magnesium additions, Molecular beam epitaxy, P−type conductors},
  author = {Michael D Rubin and Nathan Newman and James S Chan and T.C Fu and Jennifer T Ross},
  title = {P-Type Gallium Nitride by Reactive Ion-Beam Molecular Beam Epitaxy with Ion Implantation, Diffusion or Coevaporation of Mg},
  abstract = {<p>Gallium nitride is one of the most promising materials for ultraviolet and blue light‐emitting diodes and lasers. The principal technical problem that limits device applications has been achieving controllable <em>p</em>‐type doping. Molecular beam epitaxy assisted by a nitrogen ion beam produced <em>p</em>‐type GaN when doped via ion implantation, diffusion, or coevaporation of Mg. Nearly intrinsic <em>p</em>‐type material was also produced without intentional doping, exhibiting hole carrier concentrations of 5×10<sup>11</sup> cm<sup>−3</sup> and hole mobilities of over 400 cm<sup>2</sup>/V/s at 250 K. This value for the hole mobility is an order of magnitude greater than previously reported.</p>},
  year = {1993},
  journal = {Applied Physics Letters},
  volume = {64},
  number = {1},
  pages = {64-66},
  issn = {0003-6951},
  doi = {10.1063/1.110870},
  language = {eng},
}