Gallium nitride is one of the most promising materials for ultraviolet and blue light‐emitting diodes and lasers. The principal technical problem that limits device applications has been achieving controllable p‐type doping. Molecular beam epitaxy assisted by a nitrogen ion beam produced p‐type GaN when doped via ion implantation, diffusion, or coevaporation of Mg. Nearly intrinsic p‐type material was also produced without intentional doping, exhibiting hole carrier concentrations of 5×1011 cm−3 and hole mobilities of over 400 cm2/V/s at 250 K. This value for the hole mobility is an order of magnitude greater than previously reported.
BT - Applied Physics Letters C1 -Windows and Daylighting Group
C2 - LBL-34413 DO - 10.1063/1.110870 IS - 1 LA - eng M1 - 1 N2 -Gallium nitride is one of the most promising materials for ultraviolet and blue light‐emitting diodes and lasers. The principal technical problem that limits device applications has been achieving controllable p‐type doping. Molecular beam epitaxy assisted by a nitrogen ion beam produced p‐type GaN when doped via ion implantation, diffusion, or coevaporation of Mg. Nearly intrinsic p‐type material was also produced without intentional doping, exhibiting hole carrier concentrations of 5×1011 cm−3 and hole mobilities of over 400 cm2/V/s at 250 K. This value for the hole mobility is an order of magnitude greater than previously reported.
PY - 1993 SP - 64 EP - 66 ST - Appl. Phys. Lett. T2 - Applied Physics Letters TI - P-Type Gallium Nitride by Reactive Ion-Beam Molecular Beam Epitaxy with Ion Implantation, Diffusion or Coevaporation of Mg VL - 64 SN - 0003-6951 ER -