P-Type Gallium Nitride by Reactive Ion-Beam Molecular Beam Epitaxy with Ion Implantation, Diffusion or Coevaporation of Mg

Publication Type
Journal Article
Authors
DOI
10.1063/1.110870
LBL Report Number
LBL-34413
Abstract

Gallium nitride is one of the most promising materials for ultraviolet and blue light‐emitting diodes and lasers. The principal technical problem that limits device applications has been achieving controllable p‐type doping. Molecular beam epitaxy assisted by a nitrogen ion beam produced p‐type GaN when doped via ion implantation, diffusion, or coevaporation of Mg. Nearly intrinsic p‐type material was also produced without intentional doping, exhibiting hole carrier concentrations of 5×1011 cm−3 and hole mobilities of over 400 cm2/V/s at 250 K. This value for the hole mobility is an order of magnitude greater than previously reported.

Journal
Applied Physics Letters
Volume
64
Year of Publication
1993
Issue
1
Number
1
Pagination
64-66
ISSN Number
0003-6951
Custom 1
<p>Windows and Daylighting Group</p>
Short Title
Appl. Phys. Lett.
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