Thermal Annealing Characteristics of Si and Mg-implanted GaN Thin Films

Date Published
03/1996
Publication Type
Journal Article
Authors
DOI
10.1063/1.116314
LBL Report Number
LBL-37372
Abstract

In this letter, we report the results of ion implantation of GaN using 28Si and 23Mg species. Structural and electrical characterizations of the GaN thin films after thermal annealing show that native defects in the GaN films dominate over implant doping effects. The formation energies of the annealing induced defects are estimated to range from 1.4 to 3.6 eV. A 30 keV10^14 cm-2 Mg implant results in the decrease of the free-carrier concentration by three orders of magnitude compared to unimplanted GaN up to an annealing temperature of 690 °C. Furthermore, we have observed the correlation between these annealing-induced defects to both improved optical and electrical properties.

Journal
Applied Physics Letters
Volume
68
Year of Publication
1995
Issue
19
Number
19
Pagination
2702-2704
ISSN Number
0003-6951
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