Skip to main content

User account menu

  • Log in
Home

Main navigation

  • Home
  • Keywords
  • Authors

Semiconducting bismuth compounds

Ihlefeld, J.F, W Tian, Z.K Liu, W.A Doolittle, M Bernhagen, P Reiche, R Uecker, Ramamoorthy Ramesh, and D.G Schlom. "Adsorption-controlled growth of BiFeO3 by MBE and integration with wide band gap semiconductors." IEEE International Symposium on Applications of Ferroelectrics. Vol. 3. 2008.

View
Jang, H.W, S.H Baek, D Ortiz, C.M Folkman, R.R Das, Y.H Chu, J.X Zhang, V Vaithyanathan, S Choudhury, Y.B Chen, X.Q Pan, D.G Schlom, L.Q Chen, Ramamoorthy Ramesh, and C.B Eom. "Strain tunability of spontaneous polarization and enhanced ferroelectric properties in epitaxial (001) BiFeO3 thin films." IEEE International Symposium on Applications of Ferroelectrics. Vol. 3. 2008.

View
Rodriguez, B.J, Y.H Chu, Ramamoorthy Ramesh, and S.V Kalinin. "Ferroelectric domain wall pinning at a bicrystal grain boundary in bismuth ferrite." Applied Physics Letters 93 (2008).

Google Scholar  |  DOI  |  BibTeX  |  Endnote tagged  |  RIS

View
Martin, L.W, Y.-H Chu, M.B Holcomb, M Huijben, P Yu, S.-J Han, D Lee, S.X Wang, and Ramamoorthy Ramesh. "Nanoscale control of exchange bias with BiFeO 3 thin films." Nano Letters 8 (2008) 2050–2055.

Google Scholar  |  DOI  |  BibTeX  |  Endnote tagged  |  RIS

View
Pabst, G.W, L.W Martin, Y.-H Chu, and Ramamoorthy Ramesh. "Leakage mechanisms in BiFe O3 thin films." Applied Physics Letters 90 (2007).

Google Scholar  |  DOI  |  BibTeX  |  Endnote tagged  |  RIS

View

Pagination

  • Previous page ‹‹
  • Page 2
©2026 Energy Technologies Area, Berkeley Lab

Our organization

  • Contact
  • Energy Technologies Area
  • Lawrence Berkeley National Laboratory
  • Privacy and Security Notice