TY - JOUR
KW - Substrates
KW - Ferroelectricity
KW - Single crystals
KW - Ferroelectric films
KW - Ferroelectric switching
KW - Ferroelastic domains
KW - Bottom electrodes
KW - Epitaxial films
KW - Unit cells
KW - Semiconducting bismuth compounds
KW - X-ray diffractions
KW - Growth (materials)
KW - Semiconducting silicon compounds
KW - X-ray diffraction analysis
KW - Atomic-force microscopies
KW - Device applications
KW - Domain engineerings
KW - Ferroelectric properties
KW - High qualities
KW - High resolutions
KW - HRXRD
KW - Reciprocal space mappings
KW - Si substrates
KW - Step-flow growths
KW - Stripe domains
KW - Substrate anisotropies
KW - Variant selections
AU - H.W Jang
AU - D Ortiz
AU - S.-H Baek
AU - C.M Folkman
AU - R.R Das
AU - P Shafer
AU - Yimin Chen
AU - C.T Nelson
AU - X Pan
AU - Ramamoorthy Ramesh
AU - C.-B Eom
AB - The ferroelastic domain variant selection in (001) BiFeO3 films on miscut (001) SrTiO3 substrates with coherent SrRuO3 bottom electrodes and its effect on the ferroelectric properties of the films were reported. This study showed an improvement in the ferroelectric switching behavior and leakage current in BiFeO3 films applying domain engineering. Atomic force microscopy (AFM), reciprocal space mapping (RSM), and high-resolution X-ray diffraction (HRXRD) used in the study showed that miscut substrate directed the step-flow growth and two-variant stripe domains in the BiFeO3 films. The preferential distortion of unit cells and the complete step-flow growth induced by the substrate anisotropy created two-variant stripe domains in (001) BiFeO3 films. Domain engineering can be used for growing high-quality BiFeO3 films on cubic (001) Si substrates for device applications.
BT - Advanced Materials
DO - 10.1002/adma.200800823
LA - eng
M1 - 7
N1 - cited By 224
N2 - The ferroelastic domain variant selection in (001) BiFeO3 films on miscut (001) SrTiO3 substrates with coherent SrRuO3 bottom electrodes and its effect on the ferroelectric properties of the films were reported. This study showed an improvement in the ferroelectric switching behavior and leakage current in BiFeO3 films applying domain engineering. Atomic force microscopy (AFM), reciprocal space mapping (RSM), and high-resolution X-ray diffraction (HRXRD) used in the study showed that miscut substrate directed the step-flow growth and two-variant stripe domains in the BiFeO3 films. The preferential distortion of unit cells and the complete step-flow growth induced by the substrate anisotropy created two-variant stripe domains in (001) BiFeO3 films. Domain engineering can be used for growing high-quality BiFeO3 films on cubic (001) Si substrates for device applications.
PY - 2009
SP - 817
EP - 823
T2 - Advanced Materials
TI - Domain engineering for enhanced ferroelectric properties of epitaxial (001) BiFeO thin films
VL - 21
SN - 09359648
ER -