@article{33559,
  keywords = {nanostructured materials, Domain walls, Electrostatic boundary conditions, Periodic structures, Bottom electrodes, Walls (structural partitions), Semiconducting bismuth compounds, Anisotropic strains, Domain architectures, Domain structures, La-substituted, Nanoscale arrays, Nanoscale controls, One-dimensional, Periodic domains, Piezoresponse force microscopies, Poling effects, Single-crystal substrates, X- ray diffractions},
  author = {Y.-H Chu and Q He and C.-H Yang and P Yu and L.W Martin and P Shafer and Ramamoorthy Ramesh},
  title = {Nanoscale control of domain architectures in BiFeO 3 thin films},
  abstract = {We demonstrate an approach to create a one-dimensional nanoscale array of domain walls in epitaxial La-substituted BiFeO 3 films. We have used a DyScO 3 (110) o single-crystal substrate to provide an anisotropic strain to exclude two of the possible structural variants. Furthermore, through careful control of electrostatic boundary conditions, such as the thickness of the SrRuO 3 bottom electrode to induce the self-poling effects, we can choose to obtain either 109° or 71° one-dimensional periodic domain walls. Detailed measurements of the domain structures is shown using piezoresponse force microscopy and X-ray diffraction, which confirms that these periodic structures are the same as those suggested in previous literature. © American Chemical Society.},
  year = {2009},
  journal = {Nano Letters},
  volume = {9},
  number = {4},
  pages = {1726-1730},
  issn = {15306984},
  doi = {10.1021/nl900723j},
  note = {cited By 155},
  language = {eng},
}